| Вид оплаты: | L/C,T/T,Paypal |
| Инкотермс: | FOB,CFR,CIF |
| транспорт: | Ocean,Air |
| Порт: | Shanghai |
Модель: YZPST-R2619ZC21J
марка: YZPST
YZPST-R2619ZC21J
Особенности:
. Все Рассеянное Структуру
. Гребенчатыми Усилительной Конфигурации Ворота
. Гарантированное Максимальное Время Выключения
. Высокий потенциал дв/ДТ
. Собранный Прибор Давления
ЭЛЕКТРИЧЕСКИЕ ХАРАКТЕРИСТИКИ И РЕЙТИНГИ
Блокировки В Выключенном Состоянии
VRRM (1)
VDRM (1)
VRSM (1)
2100
2100
2200
ВРРМ = повторяющееся пиковое обратное напряжение
ВДРМ = повторяющееся пиковое обратное напряжение
ВРСМ = не повторяющееся пиковое обратное напряжение (2)
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
20 mA 200 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
200 V/msec |
Проведение - на государство
Parameter
Symbol
Min.
Max.
Typ.
Units
Conditions
Average
value of on-state current
IT(AV)M
2619
A
Sinewave,180o conduction,Tc=55oC
RMS
value of on-state current
ITRMS
5227
A
Nominal
value
Peak
one cPSTCle surge
(non
repetitive) current
ITSM
33.8
37.2
kA
kA
8.3
msec (60Hz), sinusoidal wave-
shape,
180o conduction, Tj = 125 oC
10.0
msec (50Hz), sinusoidal wave-
shape,
180o conduction, Tj = 125 oC
I
square t
I2t
5.71x106
A2s
8.3
msec
Latching
current
IL
-
mA
VD = 24 V; RL= 12 ohms
Holding
current
IH
1000
mA
VD
= 24 V; I =2.5 A
Peak
on-state voltage
VTM
2.3
V
ITM = 4000
A
Critical
rate of rise of on-state
current
(5, 6)
di/dt
1500
A/ms
Switching
from VDRM £ 1000 V,
non-repetitive
Critical
rate of rise of on-state
current
(6)
di/dt
1000
A/ms
Switching
from VDRM £ 1000 V
Стробирования
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
|
Peak gate current |
IGM |
|
- |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
300 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
|
Gate voltage required to trigger all units
|
VGT |
|
3 |
|
V
|
VD = 10 V;IT=3A;Tj = +25 oC
|
|
Peak negative voltage |
VRGM |
|
5 |
|
V |
|
Динамические
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
tgd |
|
- |
0.8 |
ms |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
|
Turn-on time |
tgt |
|
- |
1.5 |
|
|
|
Turn-off time (with VR = -5 V) |
tq |
|
- |
50 |
ms |
ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us |
|
Reverse recovery current |
Irm |
|
- |
|
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
ТЕРМИЧЕСКИХ И МЕХАНИЧЕСКИХ ХАРАКТЕРИСТИК И ОЦЕНОК
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/kW |
Double sided cooled Single sided cooled |
|
Thermal resistamce - case to sink |
RQ (c-s) |
|
- - |
|
K/kW |
Double sided cooled * Single sided cooled * |
|
Thermal resistamce - junction to sink |
RQ (c-s) |
|
11 22 |
|
K/kW |
Double sided cooled * Single sided cooled * |
|
Mounting force |
F |
27 |
47 |
- |
kN |
|
|
Weight |
W |
|
|
1.7 |
Kg |
about |
* Монтажные поверхности гладкой, ровной и смазаны
Примечание : в случае очертания и размеры, см. пример эскизного чертежа в последней странице этого Технические данные
|
Sym |
A |
B |
C |
D |
H |
|
mm |
109 |
73 |
98 |
3.5×3 |
35±1 |
Номер Телефона : 86-514-87782298
Whatsapp: +8613805278321
Адрес Компании : 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
сайт: https://ru.yzpst.com
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