Все рассеянное Тиристорной структуры 1000А 1800В

Thyristor

Ratings

Symbol

Definition

Conditions

min.

typ.

max.

Unit

V EQ \F(RSM,DSM)

max. non-repetitive reverse/forward blocking voltage

T_J = 25°C

1900

V

V EQ \F(RRM,DRM)

max. repetitive reverse/forward blocking voltage

T_J = 25°C

1800

V

V_T

On-state voltage

I_T=2200 A

T_J = 25°C

1.85

V

I_T(AV)

average forward current

T_C=25°C

1000

A

I_T(RMS)

RMS forward current

180° sine

2300

A

R_thJC

thermal resistance junction to case

K/W

R_thCH

thermal resistance case to heatsink

K/W

R_thJK

thermal resistance junction to heatsink

0.024

K/W

I_TSM

max. forward surge current

t = 10 ms; (50 Hz), sine

T_J = 25°C

12.1

kA

I²t

value for fusing

t = 10 ms; (50 Hz), sine

T_J = 25°C

732

kA²s

di/dt

Rate of rise of on-state current

T_J = 125°C; f = 50 Hz

t_P=200µs;di_G/dt=0.15A/µs;

I_G=0.15A;V_D= ⅔V_DRM

repetitive

200

A/µs

non-repet

400

A/µs

dv/dt

Maximum linear rate of rise of off-state voltage

V_D= ⅔V_DRM

R_GK =∞; method 1 (linear voltage rise)

T_J = 125°C

200

V/µs

V_GT

gate trigger voltage

V_D = 6V

T_J = 25°C

3.0

V

I_GT

gate trigger current

V_D = 6V

T_J = 25°C

300

mA

I_L

latching current

T_J = 25°C

A

I_H

holding current

T_J = 25°C

500

mA

t_gd

gate controlled delay time

T_J = 25°C

1.0

1.5

µs

t_q

Turn-off time

V_R=10 V; I_T=20A; V_D=⅔V_DRM

T_J = 150°C

600

650

µs

T_stg

storage temperature

-40

125

°C

T_J

virtual junction temperature

-40

125

°C

W_t

Weight

g

F

mounting force

19

29

kN