$31.510-99 Piece/Pieces
$23.5≥100Piece/Pieces
| Вид оплаты: | L/C,T/T,Paypal |
| Инкотермс: | FOB,CFR,CIF |
| транспорт: | Ocean,Land |
| Порт: | SHANGHAI |
Модель: YZPST-150B120F23
марка: Yzpst
место происхождения: Китай
VCES: 1200V
IC: 150A
ICRM: 300A
VGES: ±20V
Ptot: 968W
| Продажа единиц жилья | : | Piece/Pieces |
| Тип упаковки | : | 1. Антиэлектростатическая упаковка 2. коробка картонной коробки 3. Тренанка |
| Скачать | : |
|
Максимальная температура соединения 175 ℃
Абсолютный Максимум Рейтинги
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
|
Collector-Emitter Voltage |
VCES |
VGE=0V, IC =1mA, Tvj=25℃ |
1200 |
V |
|
Continuous Collector Current |
IC |
Tc=100℃ |
150 |
A |
|
Peak Collector Current |
ICRM |
tp=1ms |
300 |
A |
|
Gate-Emitter Voltage |
VGES |
Tvj=25℃ |
±20 |
V |
|
Total Power Dissipation (IGBT-inverter) |
Ptot |
Tc=25℃ Tvjmax=175℃ |
968 |
W |
Характеристики IGBT
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =4mA,Tvj=25℃ | 5.2 | 6 | 6.8 | V |
| VCE=1200V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=125℃ | 5 | mA | ||
| Collector-Emitter | Ic=150A,VGE=15V, Tvj=25℃ | 1.8 | 2.1 | V | ||
| Saturation Voltage | VCE(sat) | Ic=150A,VGE=15V, Tvj=125℃ | 2 | V | ||
| Input Capacitance | Cies | 9.8 | nF | |||
| Output Capacitance | Coes | VCE=25V,VGE =0V, | 0.82 | nF | ||
| Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 0.48 | nF | ||
| Internal Gate Resistance | Rgint | 2.5 | Ω | |||
| Turn-on Delay Time | td(on) | 185 | Ns | |||
| Rise Time | tr | IC =150 A | 55 | Ns | ||
| Turn-off Delay Ttime | td(off) | VCE = 600 V | 360 | Ns | ||
| Fall Time | tf | VGE = ±15V | 115 | Ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG = 5.1Ω | 15.4 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 11.6 | mJ | ||
| Turn-on Delay Time | td(on) | 200 | Ns | |||
| Rise Time | tr | IC =150 A | 60 | Ns | ||
| Turn-off Delay Time | td(off) | VCE = 600 V | 420 | Ns | ||
| Fall Time | tf | VGE = ±15V | 120 | Ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG =5.1Ω | 23.2 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 17 | mJ | ||
| Tp≤10us,VGE=15V, | ||||||
| SC Data | Isc | Tvj=150℃,Vcc=600V, | 500 | A | ||
| VCEM≤1200V | ||||||
Характеристики диода
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Diode DC Forward Current | IF | Tc=100℃ | 150 | A | ||
| Diode Peak Forward Current | IFRM | 300 | A | |||
| IF=150A,Tvj=25℃ | 1.8 | 2.3 | V | |||
| Forward Voltage | VF | IF=150A,Tvj=125℃ | 1.85 | V | ||
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Recovered Charge | Qrr | 13.4 | uC | |||
| IF =150 A | ||||||
| Peak Reverse Recovery Current | Irr | VR=600V | 143 | A | ||
| Reverse Recovery Time | trr | -diF/dt =2200A/us | 160 | ns | ||
| Reverse Recovery Energy | Erec | Tvj=25℃ | 9.1 | mJ | ||
| Recovered Charge | Qrr | 26.1 | uC | |||
| IF =150 A | ||||||
| Peak Reverse Recovery Current | Irr | VR=600V | 178 | A | ||
| Reverse Recovery Time | trr | -diF/dt =2200A/us | 440 | ns | ||
| Reverse Recovery Energy | Erec | Tvj=125℃ | 15.4 | mJ | ||
Характеристики модуля t c = 25 ° C, если не указано иное
| Parameter | Symbol | Conditions | Value | Unit | ||
| Min. | Typ. | Max. | ||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
| Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
| Operating Junction Temperature | Tvjop | -40 | 125 | ℃ | ||
| Storage Temperature | Tstg | -40 | 125 | ℃ | ||
| per IGBT-inverter | 0.155 | K/W | ||||
| Junction-to Case | R θjc | per Diode-inverter | 0.292 | K/W | ||
| Case to Sink | R θcs | Conductive grease applied | 0.05 | K/W | ||
| Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N·m | |
| Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N·m | |
| Weight of Module | G | 150 | g | |||
Упаковка Размеры
Номер Телефона : 86-514-87782298
Whatsapp: +8613805278321
Адрес Компании : 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
сайт: https://ru.yzpst.com
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