Высокая мощность dV / dt Тиристор высокой мощности 6500 В

VRRM (1)

VDRM (1)

VRSM (1)

6500

6500

6600

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

20 mA

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

I_T(AV)M

894

A

Sinewave,180^o conduction,T_c=60^oC

RMS value of on-state current

I_T(RMS)m

1404

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I_TSM

-

12

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

0.72x10⁶

A²s

8.3 msec

Latching current

I_L

3000

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

300

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

2.4

V

I_TM = 1000 A ,T_j = 25 ^oC

Critical rate of rise of on-state

current (5, 6)

di/dt

-

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

200

A/ms

Switching from V_DRM £ 1000 V

Sym

A

B

C

D

H

mm

75

47

66

3.5×3

26±1