BTB04 переменного тока управления симистора 4А

          Description

symbol

value

unit

Repetitive peak off-state voltage

(Tj= −40 ~125℃)

Half sine wave 50Hz, gate open

04-600

04-800

VDRM

VRRM

600

800

V

Nominal RMS on-state current

Full sine wave 50 Hz

IT(RMS)

4

A

Non-repetitive peak surge current

  (junction temperature Tj =25℃)

One cycle 50 Hz

ITSM

35

A

Fuse current

(t = 8.3 ms)

I²t

6

A²s

Gate average power

(T_C = 80℃, t = 8.3 ms)

PG(AV)

0.5

W

Gate peak current

(t≤2.0μs)

IGM

4

A

Work junction temperature

TJ

-40~125

℃

Storage temperature

Tstg

-40~150

℃

Description   

Symbol

Min

Type

Max

Unit

Repetitive paek off-state current

(VD = Rated VDRM,VRRM gate open )             

                           Tj = 125℃

I_DRM, I_RRM

−

−

1

mA

Peak on-state Voltage

(IT =4A)

V_T

−

1.3

1.5

V

Gate trigger current

(VD = 12 V, RL =30Ω)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

04-SL

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

                       04-CW

I_GT

−

−

−

−

−

−

−

−

−

−

−

−

10

10

10

25

25

25

mA

Gate trigger voltage

(VD = 12 V, RL =30Ω)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

                All series

V_GT

−

−

−

−

−

−

1.3

1.3

1.3

V

Gate non-trigger voltage

(VD = 12 V, RL =30Ω,Tj =125℃)

                         All series

V_GD

0.2

−

−

V

Hold current

  (Condition current  IT=100mA)

I_H

−

 −

15

mA